Internship Program
Candidates should send an email to ofmk@potomac-law.com with the subject line “Internship application” and attach cover letter, resume, and short writing sample.
OFM&K consistently seeks law and graduate students for its internship program, which allows interns to gain first-hand knowledge of and experience in general business and office policies, procedures and software while working in a dynamic, fast-paced environment. Interns receive a behind-the-scenes view of public policy and the impact it has on critical transportation sectors of the economy. Interns will monitor international, national and local legislative and regulatory developments, draft content for client publications, conduct research on issues impacting transportation-centric companies and undertake other practical policy and legal assignments.
Internship assignments and tasks will vary depending on the intern’s academic needs, background, skills and interests, but may include:
- Conducting research and developing materials to support the firm’s lobbying activities;
- Drafting articles and editorials;
- Developing regulatory compliance publications and presentations; and
- Conducting legal research and preparing documents related to the firm’s regulatory counsel services.
The ideal candidate will be a law (2L or later) or graduate student or recent graduate; capable of working independently and in a small team, interested in how businesses are impacted by government policy, both individually and on an industry basis and have strong computer skills (e.g., familiarity with Outlook, Excel, Word, etc.).
Successful candidates must work well in a team setting, demonstrate independence and initiative in achieving specific tasks and overall objectives while seeking opportunities to broaden skills and knowledge. The candidate must also consistently exhibit attention-to-detail and possess excellent written and verbal communication skills. The very best candidates have previous professional experience in aerospace, engineering, or technical fields.